4H N type Semi type SiC Wafer 6inch(0001)Double Side Polished Ra≤1 nm Customization
Description of 12 inch SiC wafer 4H N-type Semi-type SiC Wafer:
12 inch 6inch SiC wafer Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components.
The Character of 12 inch 6inch SiC wafer 4H N-type Semi-type SiC Wafer:
1. 12 inch 6inch SiC wafer High-Voltage Endurance: SiC wafer has over 10 times the breakdown field strength compared to Si material. This allows for higher breakdown voltages to be achieved through lower resistivity and thinner drift layers. For the same voltage endurance, the on-state resistance/size of SiC wafer power modules is only 1/10th of Si, leading to significantly reduced power losses.
2. 12 inch 6inch SiC wafer High-Frequency Endurance: SiC wafer does not exhibit the tail current phenomenon, enhancing the switching speed of devices. It is 3-10 times faster in switching speed compared to silicon (Si), making it suitable for higher frequencies and faster switching speeds.
3.12 inch 6inch SiC wafer High-Temperature Endurance: The bandgap width of SiC wafer(~3.2 eV) is three times that of Si, resulting in stronger conductivity. The thermal conductivity is 4-5 times that of silicon, and the electron saturation speed is 2-3 times that of Si, enabling a 10-fold increase in operating frequency. With a high melting point (2830°C, approximately twice that of Si at 1410°C), SiC wafer devices significantly improve operational temperature while reducing current leaks.
Form of 12 inch 6inch SiC wafer 4H N-type Semi-type SiC Wafer:
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 150.0 mm +/- 0.2 mm 300±25 |
| Thickness | 500 um +/- 25 um for 4H-SI
350 um +/- 25 um for 4H-N 1000±50um |
| Wafer Orientation | On axis: <0001> +/- 0.5 deg for 4H-SI
Off axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N |
| Micropipe Density (MPD) | 1 cm-2 | 5 cm-2 | 15 cm-2 | 30 cm-2 |
| Electrical Resistivity
(Ohm-cm) | 4H-N | 0.015~0.025 |
| 4H-SI | >1E5 | (90%) >1E5 |
| Doping Concentration | N-type: ~ 1E18/cm3
SI-type (V-doped): ~ 5E18/cm3 |
| Primary Flat (N type) | {10-10} +/- 5.0 deg |
| Primary Flat Length (N type) | 47.5 mm +/- 2.0 mm |
| Notch (Semi-Insulating type) | Notch |
| Edge exclusion | 3 mm |
| TTV /Bow /Warp | 15um /40um /60um |
| Surface Roughness | Polish Ra 1 nm |
| CMP Ra 0.5 nm on the Si face |
| Cracks by high intensity light | None | None | 1 allowed, 2 mm | Cumulative length 10 mm, single length 2 mm |
| Hex Plates by high intensity light* | Cumulative area 0.05 % | Cumulative area 0.05 % | Cumulative area 0.05 % | Cumulative area 0.1 % |
| Polytype Areas by high intensity light* | None | None | Cumulative area 2% | Cumulative area 5% |
| Scratches by high intensity light** | 3 scratches to 1 x wafer diameter cumulative length | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length |
| Edge chip | None | None | 3 allowed, 0.5 mm each | 5 allowed, 1 mm each |
| Contamination by high intensity light | None |
Physical Photo of 12 inch 6inch SiC wafer 4H N-type Semi-type SiC Wafer:
Application of 12inch 6inch 4H N-type Semi-type SiC Wafer:
• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes
Application Picture of 12inch 6inch 4H N-type Semi-type SiC Wafer:
Customization:
Our product customization services allow you to tailor the Silicon Carbide Wafer to your specific needs. We can adjust the Silicon Carbide layer to meet your conductivity requirements and provide a Carbide Silicon Wafer that meets your exact specifications. Contact us today to learn more about our product customization services.
Q&A:
Q:What size are SiC wafers?
A:Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants
Q:Why are SiC wafers expensive?
A:The sublimation process to produce SiC requires significant energy to reach 2,200˚C, while the final usable boule is no more than 25 mm in length, and growth times are very long
Q:How to make a SiC wafer?A:The process involves converting raw materials such as silica sand into pure silicon. The growth of silicon crystals using the Czochralski process, the slicing of the crystals into thin, flat discs, and the cleaning and preparation of the wafers for use in semiconductors devices.
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