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Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

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Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

Name: Polished DSP 2inch 3inch 4Inch 035mm 4hsemi SiC Silicon Carbide Wafer
Brand: ZMKJ
Price: 1 USD

Quality Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer for sale

Brand Name : ZMKJ

Model Number : CUSTOMIZED SIZE

Place of Origin : CHINA

MOQ : 5pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-50pcs/month

Delivery Time : 1-6weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4h-semi

Grade : test grade

Thicnkss : 0.35mm or 0.5mm

Suraface : polished DSP

Application : EPITAXIAL

Diameter : 3INCH

color : Transparent

MPD : <10cm-2

type : un-doped high purity

resistivity : >1E7 O.hm

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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un-doped 4H-semi resistivity>1E7 3inch 4inch 0.35mm sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade

Diameter		100. mm±0.38mm

Thickness		350 μm±25μm or 500±25um Or other customized thickness

Wafer Orientation		On axis : <0001>±0.5° for 4h-semi

Micropipe Density		≤1 cm-2	≤5 cm-2	≤10cm-2	≤30 cm-2

Resistivity	4H-N	0.015~0.028 Ω•cm

	6H-N	0.02~0.1 Ω•cm

	4h-semi	≥1E7 Ω·cm

Primary Flat		{10-10}±5.0°

Primary Flat Length		18.5 mm±2.0 mm

Secondary Flat Length		10.0mm±2.0 mm

Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°

Edge exclusion		1 mm

TTV/Bow /Warp		≤10μm /≤15μm /≤30μm

Roughness		Polish Ra≤1 nm

		CMP Ra≤0.5 nm

Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm


Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%

Polytype Areas by high intensity light		None		Cumulative area ≤2%	Cumulative area ≤5%


Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length


edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

Applications:

1) III-V Nitride Deposition

2) Optoelectronic Devices

3) High-Power Devices

4) High-Temperature Devices

5) High-Frequency Power Devices

Power Electronics:
- High-Voltage Devices: SiC wafers are ideal for power devices that require high breakdown voltages. They are widely used in applications such as power MOSFETs and Schottky diodes, which are essential for efficient power conversion in automotive and renewable energy sectors.
- Inverters and Converters: The high thermal conductivity and efficiency of SiC enable the development of compact and efficient inverters for electric vehicles (EVs) and solar inverters.
RF and Microwave Devices:
- High-Frequency Amplifiers: The excellent electron mobility of SiC allows for the fabrication of high-frequency RF devices, making them suitable for telecommunications and radar systems.
- GaN on SiC Technology: Our SiC wafers can serve as substrates for GaN (Gallium Nitride) devices, enhancing performance in RF applications.
LED and Optoelectronic Devices:
- UV LEDs: SiC's wide bandgap makes it an excellent substrate for UV LED production, which is used in applications ranging from sterilization to curing processes.
- Laser Diodes: The superior thermal management of SiC wafers improves the performance and longevity of laser diodes used in various industrial applications.
High-Temperature Applications:
- Aerospace and Defense: SiC wafers can withstand extreme temperatures and harsh environments, making them suitable for aerospace applications and military electronics.
- Automotive Sensors: Their durability and performance at high temperatures make SiC wafers ideal for automotive sensors and control systems.
Research and Development:
- Material Science: Researchers utilize polished SiC wafers for various studies in material science, including investigations into semiconductor properties and the development of new materials.
- Device Fabrication: Our wafers are used in laboratories and R&D facilities for the fabrication of prototype devices and the exploration of advanced semiconductor technologies.

Production display show

Polished DSP 2inch 3inch 4Inch 0.35mm 4h-semi SiC Silicon Carbide Wafer

CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

SiC Applications

Application areas

1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
diodes, IGBT, MOSFET
2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

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