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6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer

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6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer

Brand Name : ZMKJ

Model Number : 4inch high purity sic wafers

Place of Origin : CHINA

MOQ : 2pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-50pcs/month

Delivery Time : 1-4weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4h-N

Grade : Production grade

Thicnkss : 2mm or 0.5mm

Suraface : dsp

Application : epitaxial

Diameter : 4inch

color : colorless

MPD : <1cm-2

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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single

un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch production dummy Grade

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

1. Description
Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61
ne = 2.66

no = 2.60
ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer

4H-N 4inch diameter Silicon Carbide (SiC) Substrate Specification

2inch diameter Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 100. mm±0.38mm 150±0.5mm
Thickness 500±25um Or other customized thickness
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤0.4cm-2 ≤1cm-2 ≤5cm-2 ≤10 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E7 Ω·cm
Primary Flat {10-10}±5.0°
Primary Flat Length 18.5 mm±2.0 mm
Secondary Flat Length 10.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 1 mm
TTV/Bow /Warp ≤10μm /≤10μm /≤15μm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each

Production display show

6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer
6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer
6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer
CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch

SiC Applications

Application areas

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

1. High-Power Electronic Devices

Due to its superior thermal conductivity, high breakdown voltage, and wide bandgap, 6N purity undoped HPSI SiC wafers are ideal for high-power electronic devices. These wafers can be used in power electronics such as diodes, MOSFETs, and IGBTs for applications like electric vehicles, renewable energy systems, and power grid management, enabling efficient power conversion and reducing energy losses.

2. Radio Frequency (RF) and Microwave Devices

HPSI SiC wafers are essential for RF and microwave devices, particularly for use in telecommunications, radar, and satellite communication systems. Their semi-insulating nature helps in reducing parasitic capacitances and improving high-frequency performance, making them suitable for RF amplifiers, switches, and oscillators in wireless communication and defense technologies.

3. Optoelectronic Devices

SiC wafers are increasingly used in optoelectronic applications, including UV detectors, LEDs, and lasers. The 6N purity undoped wafers provide superior material characteristics that enhance the performance of these devices, particularly in harsh environments where conventional silicon-based devices would fail. Applications include medical diagnostics, military equipment, and industrial sensing.

4. Wide Bandgap Semiconductors for Harsh Environments

SiC wafers are known for their ability to function in extreme temperatures and high-radiation environments. These characteristics make 6N purity SiC wafers perfect for aerospace, automotive, and defense industries, where devices need to operate under harsh conditions, such as in spacecraft, high-temperature engines, or nuclear reactors.

5. Research and Development

As a dummy prime-grade wafer, this type of SiC wafer is used in R&D environments for testing and calibration purposes. Its high purity and polished surface make it ideal for validating processes in semiconductor fabrication, testing new materials, and developing new semiconductor devices without the need for active doping. It's frequently used in academic and industrial research labs for studies in materials science, device physics, and semiconductor engineering.

6. High-Frequency Switching Devices

SiC wafers are commonly utilized in high-frequency switching devices for applications in power management systems. Their wide bandgap and semi-insulating properties make them highly efficient for handling fast switching speeds with reduced power losses, which are critical in systems like inverters, converters, and uninterruptible power supplies (UPS).

7. Wafer-Level Packaging and MEMS

The DSP surface of the SiC wafer allows for precise integration into wafer-level packaging and micro-electromechanical systems (MEMS). These applications require extremely smooth surfaces for high-resolution patterning and etching, making the polished surface of the 6N purity wafer a crucial feature. MEMS devices are commonly used in sensors, actuators, and other miniaturized systems for automotive, medical, and consumer electronics applications.

8. Quantum Computing and Advanced Electronics

In cutting-edge applications like quantum computing and next-generation semiconductor devices, the undoped HPSI SiC wafer serves as a stable and highly pure platform for building quantum devices. The high purity and semi-insulating properties make it an ideal material for hosting qubits and other quantum components.

In conclusion, the 6N purity DSP surface, undoped HPSI Dummy Prime Grade SiC wafer is an essential material for a wide range of applications, including high-power electronics, RF devices, optoelectronics, quantum computing, and advanced research. Its high purity, semi-insulating properties, and polished surface enable superior performance in challenging environments and contribute to advancements in both industrial and academic research.

>Packaging – Logistcs


we concerns each details of the package , cleaning, anti-static , shock treatment .

According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.

FAQ
Q1. Are you a factory?
A1. Yes, we are a professional manufacturer of optical components, we have more than 8years experience in wafers and optical lens process.
Q2. What is the MOQ of your products?
A2. No MOQ for customer if our product is in stock, or 1-10pcs.
Q3:Can I custom the products based on my requirement?
A3.Yes, we can custom the material, specifications and optical coating for youroptical components as your requirement.
Q4. How can I get sample from you?
A4. Just send us your requirements, then we will sendsamples accordingly.
Q5. How many days will samples be finished? How about mass products?
A5. Generally, we need 1~2weeks to finish the sample production. As for the mass products, it depends on your order quantity.
Q6. What's the delivery time?
A6. (1)For inventory: the delivery time is 1-3 working days. (2) For customized products: the delivery time is 7 to 25 working days.
According to the quantity.
Q7. How do you control the quality?
A7. More than four times quality inspect during production process,we can provide the Quality test report.
Q8. How about your optical lens production ability per Month?
A8. About 1,000pcs/Month.According to the detail requirement.


Product Tags:

carborundum Silicon wafer

      

dummy grade Silicon wafer

      

DSP monocrystalline silicon wafer

      
Quality 6N Purity DSP Surface Undoped HPSI Dummy Prime Grade SIC Wafer for sale

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